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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI3493BDV-T1-GE3

SI3493BDV-T1-GE3

SI3493BDV-T1-GE3
Electro-Films (EFI) / Vishay

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SI3493BDV-T1-GE3

ManufacturerElectro-Films (EFI) / Vishay
DescriptionMOSFET P-CH 20V 8A 6-TSOP
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 900mV @ 250µA
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
Supplier Device Package 6-TSOP
Series TrenchFET®
Rds On (Max) @ Id, Vgs 27.5 mOhm @ 7A, 4.5V
Power Dissipation (Max) 2.08W (Ta), 2.97W (Tc)
Packaging Cut Tape (CT)
Package / Case SOT-23-6 Thin, TSOT-23-6
Other Names SI3493BDV-T1-GE3CT
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1805pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 43.5nC @ 5V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Drain to Source Voltage (Vdss) 20V
Detailed Description P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C 8A (Tc)

SI3493BDV

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In stock:18364
  • 1 pcs$0.792
  • 200 pcs$0.307
  • 500 pcs$0.297
  • 1000 pcs$0.29

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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