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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI2308CDS-T1-GE3

SI2308CDS-T1-GE3

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SI2308CDS-T1-GE3

ManufacturerElectro-Films (EFI) / Vishay
DescriptionMOSFET N-CH 60V 2.6A SOT23-3
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 3V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-23-3 (TO-236)
Series TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs 144 mOhm @ 1.9A, 10V
Power Dissipation (Max) 1.6W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-236-3, SC-59, SOT-23-3
Other Names SI2308CDS-T1-GE3TR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 105pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 4nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 60V
Detailed Description N-Channel 60V 2.6A (Tc) 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)

SI2308CDS

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Reference Price(In US Dollars)

In stock:4079
  • 5 pcs$0.228
  • 50 pcs$0.197
  • 150 pcs$0.184
  • 500 pcs$0.167
  • 3000 pcs$0.16
  • 6000 pcs$0.156

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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