SI2308BDS-T1-GE3
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SI2308BDS-T1-GE3
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | MOSFET N-CH 60V 2.3A SOT23-3 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 156 mOhm @ 1.9A, 10V |
| Power Dissipation (Max) | 1.09W (Ta), 1.66W (Tc) |
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Other Names | SI2308BDS-T1-GE3CT |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 33 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Detailed Description | N-Channel 60V 2.3A (Tc) 1.09W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236) |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Tc) |
| RFQ | |
Reference Price(In US Dollars)
- 5 pcs$0.222
- 50 pcs$0.196
- 150 pcs$0.186
- 500 pcs$0.172
- 3000 pcs$0.13
- 6000 pcs$0.126
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of SI2308BDS-T1-GE3
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