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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGTG10N120BND

HGTG10N120BND

HGTG10N120BND
AMI Semiconductor / ON Semiconductor

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HGTG10N120BND

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionIGBT 1200V 35A 298W TO247
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Test Condition 960V, 10A, 10 Ohm, 15V
Td (on/off) @ 25°C 23ns/165ns
Switching Energy 850µJ (on), 800µJ (off)
Supplier Device Package TO-247
Series -
Reverse Recovery Time (trr) 70ns
Power - Max 298W
Packaging Tube
Package / Case TO-247-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type NPT
Gate Charge 100nC
Detailed Description IGBT NPT 1200V 35A 298W Through Hole TO-247
Current - Collector Pulsed (Icm) 80A
Current - Collector (Ic) (Max) 35A

HGTG10N120BND

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Reference Price(In US Dollars)

In stock:4145
  • 10 pcs$1.853
  • 100 pcs$1.775
  • 300 pcs$1.667
  • 500 pcs$1.544

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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