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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGTD1N120BNS9A

HGTD1N120BNS9A

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HGTD1N120BNS9A

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionIGBT 1200V 5.3A 60W TO252AA
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 1A
Test Condition 960V, 1A, 82 Ohm, 15V
Td (on/off) @ 25°C 15ns/67ns
Switching Energy 70µJ (on), 90µJ (off)
Supplier Device Package TO-252AA
Series -
Power - Max 60W
Packaging Original-Reel®
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names HGTD1N120BNS9ADKR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 44 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type NPT
Gate Charge 14nC
Detailed Description IGBT NPT 1200V 5.3A 60W Surface Mount TO-252AA
Current - Collector Pulsed (Icm) 6A
Current - Collector (Ic) (Max) 5.3A
Base Part Number HGTD1N120

HGTD1N120BNS, HGTP1N120BN

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Reference Price(In US Dollars)

In stock:12624
  • 10 pcs$1.411
  • 100 pcs$1.129
  • 1000 pcs$0.969
  • 2500 pcs$0.96

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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