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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQB30N06TM

FQB30N06TM

FQB30N06TM
AMI Semiconductor / ON Semiconductor

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FQB30N06TM

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionMOSFET N-CH 60V 30A D2PAK
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB)
Series QFET®
Rds On (Max) @ Id, Vgs 40 mOhm @ 15A, 10V
Power Dissipation (Max) 3.75W (Ta), 79W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 945pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V
Detailed Description N-Channel 60V 30A (Tc) 3.75W (Ta), 79W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)

FQB30N06, FQI30N06

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