FQB2N80TM
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FQB2N80TM
| Manufacturer | AMI Semiconductor / ON Semiconductor |
|---|---|
| Description | MOSFET N-CH 800V 2.4A D2PAK |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | D²PAK (TO-263AB) |
| Series | QFET® |
| Rds On (Max) @ Id, Vgs | 6.3 Ohm @ 900mA, 10V |
| Power Dissipation (Max) | 3.13W (Ta), 85W (Tc) |
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 800V |
| Detailed Description | N-Channel 800V 2.4A (Tc) 3.13W (Ta), 85W (Tc) Surface Mount D²PAK (TO-263AB) |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| RFQ | |
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Introduce of FQB2N80TM
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