SIHG33N65E-GE3
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SIHG33N65E-GE3
| Manufacturer | Vishay Siliconix |
|---|---|
| Description | MOSFET N-CH 650V 32.4A TO-247AC |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Test | 4040pF @ 100V |
| Voltage - Breakdown | TO-247AC |
| Vgs(th) (Max) @ Id | 105 mOhm @ 16.5A, 10V |
| Vgs (Max) | 10V |
| Technology | MOSFET (Metal Oxide) |
| Series | - |
| RoHS Status | Digi-Reel® |
| Rds On (Max) @ Id, Vgs | 32.4A (Tc) |
| Polarization | TO-247-3 |
| Other Names | SIHG33N65E-GE3DKR |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 20 Weeks |
| Manufacturer Part Number | SIHG33N65E-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds | 173nC @ 10V |
| IGBT Type | ±30V |
| Gate Charge (Qg) (Max) @ Vgs | 4V @ 250µA |
| FET Feature | N-Channel |
| Expanded Description | N-Channel 650V 32.4A (Tc) 313W (Tc) Through Hole TO-247AC |
| Drain to Source Voltage (Vdss) | - |
| Description | MOSFET N-CH 650V 32.4A TO-247AC |
| Current - Continuous Drain (Id) @ 25°C | 650V |
| Capacitance Ratio | 313W (Tc) |
| RFQ | |
Reference Price(In US Dollars)
- 1 pcs$7.903
- 10 pcs$7.142
- 25 pcs$6.81
- 100 pcs$5.913
- 250 pcs$5.648
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of SIHG33N65E-GE3
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