SIHB12N65E-GE3
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SIHB12N65E-GE3
| Manufacturer | Vishay Siliconix |
|---|---|
| Description | MOSFET N-CH 650V 12A D2PAK |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Test | 1224pF @ 100V |
| Voltage - Breakdown | D²PAK (TO-263) |
| Vgs(th) (Max) @ Id | 380 mOhm @ 6A, 10V |
| Technology | MOSFET (Metal Oxide) |
| Series | - |
| RoHS Status | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 12A (Tc) |
| Polarization | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 19 Weeks |
| Manufacturer Part Number | SIHB12N65E-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds | 70nC @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4V @ 250µA |
| FET Feature | N-Channel |
| Expanded Description | N-Channel 650V 12A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263) |
| Drain to Source Voltage (Vdss) | - |
| Description | MOSFET N-CH 650V 12A D2PAK |
| Current - Continuous Drain (Id) @ 25°C | 650V |
| Capacitance Ratio | 156W (Tc) |
| RFQ | |
Reference Price(In US Dollars)
- 1000 pcs$1.606
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of SIHB12N65E-GE3
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