SIA421DJ-T1-GE3
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SIA421DJ-T1-GE3
| Manufacturer | Vishay Siliconix |
|---|---|
| Description | MOSFET P-CH 30V 12A SC70-6 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Test | 950pF @ 15V |
| Voltage - Breakdown | PowerPAK® SC-70-6 Single |
| Vgs(th) (Max) @ Id | 35 mOhm @ 5.3A, 10V |
| Vgs (Max) | 4.5V, 10V |
| Technology | MOSFET (Metal Oxide) |
| Series | TrenchFET® |
| RoHS Status | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 12A (Tc) |
| Polarization | PowerPAK® SC-70-6 |
| Other Names | SIA421DJ-T1-GE3TR SIA421DJT1GE3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 24 Weeks |
| Manufacturer Part Number | SIA421DJ-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds | 29nC @ 10V |
| IGBT Type | ±20V |
| Gate Charge (Qg) (Max) @ Vgs | 3V @ 250µA |
| FET Feature | P-Channel |
| Expanded Description | P-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single |
| Drain to Source Voltage (Vdss) | - |
| Description | MOSFET P-CH 30V 12A SC70-6 |
| Current - Continuous Drain (Id) @ 25°C | 30V |
| Capacitance Ratio | 3.5W (Ta), 19W (Tc) |
| RFQ | |
Reference Price(In US Dollars)
- 1 pcs$0.765
- 10 pcs$0.644
- 30 pcs$0.582
- 100 pcs$0.522
- 500 pcs$0.434
- 1000 pcs$0.415
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of SIA421DJ-T1-GE3
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