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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI3460BDV-T1-GE3

SI3460BDV-T1-GE3

SI3460BDV-T1-GE3
Vishay / Siliconix

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SI3460BDV-T1-GE3

ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 20V 8A 6-TSOP
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Test 860pF @ 10V
Voltage - Breakdown 6-TSOP
Vgs(th) (Max) @ Id 27 mOhm @ 5.1A, 4.5V
Technology MOSFET (Metal Oxide)
Series TrenchFET®
RoHS Status Tape & Reel (TR)
Rds On (Max) @ Id, Vgs 8A (Tc)
Polarization SOT-23-6 Thin, TSOT-23-6
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 15 Weeks
Manufacturer Part Number SI3460BDV-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds 24nC @ 8V
Gate Charge (Qg) (Max) @ Vgs 1V @ 250µA
FET Feature N-Channel
Expanded Description N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP
Drain to Source Voltage (Vdss) -
Description MOSFET N-CH 20V 8A 6-TSOP
Current - Continuous Drain (Id) @ 25°C 20V
Capacitance Ratio 2W (Ta), 3.5W (Tc)

SI3460BDV

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Reference Price(In US Dollars)

In stock:4002
  • 1 pcs$0.399
  • 200 pcs$0.155
  • 500 pcs$0.149
  • 1000 pcs$0.147

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