SI2342DS-T1-GE3
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SI2342DS-T1-GE3
| Manufacturer | Vishay Siliconix |
|---|---|
| Description | MOSFET N-CH 8V 6A SOT-23 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Test | 1070pF @ 4V |
| Voltage - Breakdown | SOT-23 |
| Vgs(th) (Max) @ Id | 17 mOhm @ 7.2A, 4.5V |
| Vgs (Max) | 1.2V, 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Series | TrenchFET® |
| RoHS Status | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 6A (Tc) |
| Polarization | TO-236-3, SC-59, SOT-23-3 |
| Other Names | SI2342DS-T1-GE3-ND SI2342DS-T1-GE3TR |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 24 Weeks |
| Manufacturer Part Number | SI2342DS-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds | 15.8nC @ 4.5V |
| IGBT Type | ±5V |
| Gate Charge (Qg) (Max) @ Vgs | 800mV @ 250µA |
| FET Feature | N-Channel |
| Expanded Description | N-Channel 8V 6A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23 |
| Drain to Source Voltage (Vdss) | - |
| Description | MOSFET N-CH 8V 6A SOT-23 |
| Current - Continuous Drain (Id) @ 25°C | 8V |
| Capacitance Ratio | 1.3W (Ta), 2.5W (Tc) |
| RFQ | |
Reference Price(In US Dollars)
- 1 pcs$0.87
- 10 pcs$0.79
- 30 pcs$0.745
- 100 pcs$0.695
- 500 pcs$0.673
- 1000 pcs$0.662
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of SI2342DS-T1-GE3
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