TP65H050WS
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TP65H050WS
| Manufacturer | Transphorm |
|---|---|
| Description | 650 V 34 A CASCODE GAN FET |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Vgs (Max) | ±20V |
| Technology | GaNFET (Gallium Nitride) |
| Supplier Device Package | TO-247-3 |
| Series | - |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 22A, 10V |
| Power Dissipation (Max) | 119W (Tc) |
| Package / Case | TO-247-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Manufacturer Standard Lead Time | 15 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Detailed Description | N-Channel 650V 34A (Tc) 119W (Tc) Through Hole TO-247-3 |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| RFQ | |
Reference Price(In US Dollars)
- 1 pcs$21.716
- 10 pcs$19.743
- 30 pcs$18.262
- 120 pcs$16.781
- 270 pcs$15.30
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of TP65H050WS
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