RN2706JE(TE85L,F)
RN2706JE(TE85L,F)
Manufacturer | Toshiba Semiconductor and Storage |
---|---|
Description | TRANS 2PNP PREBIAS 0.1W ESV |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Supplier Device Package | ESV |
Series | - |
Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 4.7 kOhms |
Power - Max | 100mW |
Packaging | Cut Tape (CT) |
Package / Case | SOT-553 |
Other Names | RN2706JE(TE85LF)CT |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 200MHz |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 100mA |
RFQ |
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