RN2422TE85LF
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RN2422TE85LF
| Manufacturer | Toshiba Semiconductor and Storage |
|---|---|
| Description | TRANS PREBIAS PNP 200MW SMINI |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 50mA |
| Transistor Type | PNP - Pre-Biased |
| Supplier Device Package | S-Mini |
| Series | - |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
| Resistor - Base (R1) | 2.2 kOhms |
| Power - Max | 200mW |
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Other Names | RN2422(TE85L,F) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 11 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Frequency - Transition | 200MHz |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 800mA 200MHz 200mW Surface Mount S-Mini |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 65 @ 100mA, 1V |
| Current - Collector Cutoff (Max) | 500nA |
| Current - Collector (Ic) (Max) | 800mA |
| RFQ | |
Reference Price(In US Dollars)
- 3000 pcs$0.105
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of RN2422TE85LF
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