RN2312(TE85L,F)
RN2312(TE85L,F)
Manufacturer | Toshiba Semiconductor and Storage |
---|---|
Description | TRANS PREBIAS PNP 0.1W USM |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Transistor Type | PNP - Pre-Biased |
Supplier Device Package | USM |
Series | - |
Resistor - Base (R1) | 22 kOhms |
Power - Max | 100mW |
Packaging | Tape & Reel (TR) |
Package / Case | SC-70, SOT-323 |
Other Names | RN2312(TE85LF) RN2312(TE85LF)-ND RN2312(TE85LF)TR RN2312TE85LF |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 16 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 200MHz |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 100mA |
Base Part Number | RN231* |
RFQ |
Reference Price(In US Dollars)
- 3000 pcs$0.057
- 6000 pcs$0.049
- 15000 pcs$0.042
- 30000 pcs$0.04
- 75000 pcs$0.037
- 150000 pcs$0.033
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of RN2312(TE85L,F)
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