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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN2312(TE85L,F)

RN2312(TE85L,F)

RN2312(TE85L,F)
Toshiba Semiconductor and Storage

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RN2312(TE85L,F)

ManufacturerToshiba Semiconductor and Storage
DescriptionTRANS PREBIAS PNP 0.1W USM
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type PNP - Pre-Biased
Supplier Device Package USM
Series -
Resistor - Base (R1) 22 kOhms
Power - Max 100mW
Packaging Tape & Reel (TR)
Package / Case SC-70, SOT-323
Other Names RN2312(TE85LF)
RN2312(TE85LF)-ND
RN2312(TE85LF)TR
RN2312TE85LF
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 200MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA
Base Part Number RN231*

RN2312,13

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Reference Price(In US Dollars)

In stock:332647
  • 3000 pcs$0.057
  • 6000 pcs$0.049
  • 15000 pcs$0.042
  • 30000 pcs$0.04
  • 75000 pcs$0.037
  • 150000 pcs$0.033

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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