RN1116MFV,L3F
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RN1116MFV,L3F
Manufacturer | Toshiba Semiconductor and Storage |
---|---|
Description | X34 PB-F VESM TRANSISTOR PD 150M |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Transistor Type | NPN - Pre-Biased |
Supplier Device Package | VESM |
Series | - |
Resistor - Emitter Base (R2) | 10 kOhms |
Resistor - Base (R1) | 4.7 kOhms |
Power - Max | 150mW |
Package / Case | SOT-723 |
Other Names | RN1116MFVL3F |
Mounting Type | Surface Mount |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 250MHz |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |
RFQ |
Reference Price(In US Dollars)
- 8000 pcs$0.034
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of RN1116MFV,L3F
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