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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1103MFV(TPL3)

RN1103MFV(TPL3)

RN1103MFV(TPL3)
Toshiba Semiconductor and Storage

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RN1103MFV(TPL3)

ManufacturerToshiba Semiconductor and Storage
DescriptionTRANS PREBIAS NPN 150MW VESM
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Transistor Type NPN - Pre-Biased
Supplier Device Package VESM
Series -
Resistor - Emitter Base (R2) 22 kOhms
Resistor - Base (R1) 22 kOhms
Power - Max 150mW
Packaging Tape & Reel (TR)
Package / Case SOT-723
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA
Base Part Number RN110*

RN1101-6MFB

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Reference Price(In US Dollars)

In stock:7645
  • 8000 pcs$0.051

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