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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > HN1B01FU-Y(L,F,T)

HN1B01FU-Y(L,F,T)

HN1B01FU-Y(L,F,T)
Toshiba Semiconductor and Storage

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HN1B01FU-Y(L,F,T)

ManufacturerToshiba Semiconductor and Storage
DescriptionTRANS NPN/PNP 50V 0.15A US6
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Transistor Type NPN, PNP
Supplier Device Package US6
Series -
Power - Max 200mW
Packaging Cut Tape (CT)
Package / Case 6-TSSOP, SC-88, SOT-363
Other Names HN1B01FU-Y(LFT)CT
Operating Temperature 125°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 120MHz
Detailed Description Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 120MHz 200mW Surface Mount US6
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 6V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 150mA

HN1B01FU

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Reference Price(In US Dollars)

In stock:50014
  • 1 pcs$0.474
  • 10 pcs$0.341
  • 25 pcs$0.265

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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