2SB1457(TE6,F,M)
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2SB1457(TE6,F,M)
| Manufacturer | Toshiba Semiconductor and Storage |
|---|---|
| Description | TRANS PNP 2A 100V TO226-3 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
| Transistor Type | PNP |
| Supplier Device Package | TO-92MOD |
| Series | - |
| Power - Max | 900mW |
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Other Names | 2SB1457(TE6FM) 2SB1457TE6FM |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Frequency - Transition | 50MHz |
| Detailed Description | Bipolar (BJT) Transistor PNP 100V 2A 50MHz 900mW Through Hole TO-92MOD |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 2V |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| Current - Collector (Ic) (Max) | 2A |
| RFQ | |
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