2SA1315-Y,T6ASNF(J
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2SA1315-Y,T6ASNF(J
| Manufacturer | Toshiba Semiconductor and Storage |
|---|---|
| Description | TRANS PNP 2A 80V TO226-3 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A |
| Transistor Type | PNP |
| Supplier Device Package | TO-92MOD |
| Series | - |
| Power - Max | 900mW |
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Other Names | 2SA1315-YT6ASNF(J 2SA1315YT6ASNFJ |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Frequency - Transition | 80MHz |
| Detailed Description | Bipolar (BJT) Transistor PNP 80V 2A 80MHz 900mW Through Hole TO-92MOD |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA, 2V |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| Current - Collector (Ic) (Max) | 2A |
| RFQ | |
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