UNR422100A
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UNR422100A
| Manufacturer | Panasonic |
|---|---|
| Description | TRANS PREBIAS NPN 300MW NS-B1 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 100mA |
| Transistor Type | NPN - Pre-Biased |
| Supplier Device Package | NS-B1 |
| Series | - |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
| Resistor - Base (R1) | 2.2 kOhms |
| Power - Max | 300mW |
| Packaging | Cut Tape (CT) |
| Package / Case | NS-B1 |
| Other Names | UNR422100ACT |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Frequency - Transition | 200MHz |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 300mW Through Hole NS-B1 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 100mA, 10V |
| Current - Collector Cutoff (Max) | 1µA |
| Current - Collector (Ic) (Max) | 500mA |
| RFQ | |
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Introduce of UNR422100A
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