UNR421100A
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UNR421100A
| Manufacturer | Panasonic |
|---|---|
| Description | TRANS PREBIAS NPN 300MW NS-B1 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Transistor Type | NPN - Pre-Biased |
| Supplier Device Package | NS-B1 |
| Series | - |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Resistor - Base (R1) | 10 kOhms |
| Power - Max | 300mW |
| Packaging | Tape & Box (TB) |
| Package / Case | NS-B1 |
| Other Names | UNR421100ATB |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Frequency - Transition | 150MHz |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 300mW Through Hole NS-B1 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Current - Collector Cutoff (Max) | 500nA |
| Current - Collector (Ic) (Max) | 100mA |
| RFQ | |
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Introduce of UNR421100A
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