PDTA123ES,126
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PDTA123ES,126
Manufacturer | NXP Semiconductors / Freescale |
---|---|
Description | TRANS PREBIAS PNP 500MW TO92-3 |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Transistor Type | PNP - Pre-Biased |
Supplier Device Package | TO-92-3 |
Series | - |
Resistor - Emitter Base (R2) | 2.2 kOhms |
Resistor - Base (R1) | 2.2 kOhms |
Power - Max | 500mW |
Packaging | Tape & Box (TB) |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Other Names | 934057559126 PDTA123ES AMO PDTA123ES AMO-ND |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V |
Current - Collector Cutoff (Max) | 1µA |
Current - Collector (Ic) (Max) | 100mA |
Base Part Number | PDTA123 |
RFQ |
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