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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > JANTX2N3019/TR

JANTX2N3019/TR

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JANTX2N3019/TR

ManufacturerMicrosemi
DescriptionSMALL-SIGNAL BJT
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusRoHS non-compliant
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Transistor Type NPN
Supplier Device Package TO-5
Series Military, MIL-PRF-19500/391
RoHS Status RoHS non-compliant
Power - Max 800mW
Packaging Tape & Reel (TR)
Package / Case TO-205AA, TO-5-3 Metal Can
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Frequency - Transition -
Detailed Description Bipolar (BJT) Transistor NPN 80V 1A 800mW Through Hole TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Current - Collector Cutoff (Max) 10nA
Current - Collector (Ic) (Max) 1A

2N3019

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