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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > JANSR2N3810U

JANSR2N3810U

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JANSR2N3810U

ManufacturerMicrosemi
DescriptionRH SMALL-SIGNAL BJT
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusRoHS non-compliant
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 100µA
Transistor Type 2 PNP (Dual)
Supplier Device Package 6-SMD
Series Military, MIL-PRF-19500/336
RoHS Status RoHS non-compliant
Power - Max 350mW
Package / Case 6-SMD, No Lead
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Surface Mount
Manufacturer Standard Lead Time 33 Weeks
Frequency - Transition -
Detailed Description Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Surface Mount 6-SMD
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1mA, 5V
Current - Collector Cutoff (Max) 10µA (ICBO)
Current - Collector (Ic) (Max) 50mA
RFQ

Reference Price(In US Dollars)

In stock:132
  • 50 pcs$227.331

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