APTM100DA18T1G
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APTM100DA18T1G
| Manufacturer | Microsemi |
|---|---|
| Description | MOSFET N-CH 1000V 40A SP1 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | SP1 |
| Series | - |
| Rds On (Max) @ Id, Vgs | 216 mOhm @ 33A, 10V |
| Power Dissipation (Max) | 657W (Tc) |
| Packaging | Bulk |
| Package / Case | SP1 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 14800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 570nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 1000V |
| Detailed Description | N-Channel 1000V 40A (Tc) 657W (Tc) Chassis Mount SP1 |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| RFQ | |
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Introduce of APTM100DA18T1G
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