2N2907AE4
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2N2907AE4
| Manufacturer | Microsemi |
|---|---|
| Description | DIE TRANS PNP MED PWR GEN PURP T |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | RoHS Compliant |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Transistor Type | PNP |
| Supplier Device Package | TO-18 |
| Series | - |
| RoHS Status | RoHS Compliant |
| Power - Max | 500mW |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Frequency - Transition | - |
| Detailed Description | Bipolar (BJT) Transistor PNP 60V 600mA 500mW Through Hole TO-18 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| Current - Collector (Ic) (Max) | 600mA |
| RFQ | |
Reference Price(In US Dollars)
- 300 pcs$5.075
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of 2N2907AE4
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