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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > IMH23T110

IMH23T110

IMH23T110
LAPIS Semiconductor

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IMH23T110

ManufacturerLAPIS Semiconductor
DescriptionTRANS PREBIAS DUAL NPN SMT6
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 20V
Vce Saturation (Max) @ Ib, Ic 150mV @ 2.5mA, 50mA
Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package SMT6
Series -
Resistor - Emitter Base (R2) -
Resistor - Base (R1) 4.7 kOhms
Power - Max 300mW
Packaging Tape & Reel (TR)
Package / Case SC-74, SOT-457
Other Names IMH23T110-ND
IMH23T110TR
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 10 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 150MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 20V 600mA 150MHz 300mW Surface Mount SMT6
DC Current Gain (hFE) (Min) @ Ic, Vce 820 @ 50mA, 5V
Current - Collector Cutoff (Max) -
Current - Collector (Ic) (Max) 600mA
Base Part Number *MH23

SMT6 T110 Taping Spec

IMH23

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Reference Price(In US Dollars)

In stock:323
  • 5 pcs$0.106
  • 50 pcs$0.094
  • 150 pcs$0.088
  • 500 pcs$0.084
  • 3000 pcs$0.079
  • 6000 pcs$0.077

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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