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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > IMB4AT110

IMB4AT110

IMB4AT110
LAPIS Semiconductor

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IMB4AT110

ManufacturerLAPIS Semiconductor
DescriptionTRANS PREBIAS DUAL PNP SMT6
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package SMT6
Series -
Resistor - Emitter Base (R2) -
Resistor - Base (R1) 10 kOhms
Power - Max 300mW
Packaging Tape & Reel (TR)
Package / Case SC-74, SOT-457
Other Names IMB4AT110-ND
IMB4AT110TR
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Current - Collector Cutoff (Max) -
Current - Collector (Ic) (Max) 100mA
Base Part Number MB4

EMB3, UMB3N, IMB3A

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Reference Price(In US Dollars)

In stock:112941
  • 3000 pcs$0.116

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