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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMG3T2R

EMG3T2R

EMG3T2R
LAPIS Semiconductor

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EMG3T2R

ManufacturerLAPIS Semiconductor
DescriptionTRANS 2NPN PREBIAS 0.15W EMT3
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA
Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package EMT3
Series -
Resistor - Emitter Base (R2) -
Resistor - Base (R1) 4.7 kOhms
Power - Max 150mW
Packaging Tape & Reel (TR)
Package / Case SC-75, SOT-416
Other Names EMG3T2R-ND
EMG3T2RTR
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 10 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Current - Collector Cutoff (Max) 500nA (ICBO)
Current - Collector (Ic) (Max) 100mA
Base Part Number *MG3

EMG3, UMG3N, FMG3A

EMT5 T2R Taping Spec

RFQ

Reference Price(In US Dollars)

In stock:161301
  • 5 pcs$0.123
  • 50 pcs$0.108
  • 150 pcs$0.102
  • 500 pcs$0.077
  • 2500 pcs$0.074
  • 5000 pcs$0.072

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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