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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXFH6N100F

IXFH6N100F

IXFH6N100F
IXYS RF

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IXFH6N100F

ManufacturerIXYS RF
DescriptionMOSFET N-CH 1000V 6A TO247
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-247 (IXFH)
Series HiPerRF™
Rds On (Max) @ Id, Vgs 1.9 Ohm @ 3A, 10V
Power Dissipation (Max) 180W (Tc)
Packaging Tube
Package / Case TO-247-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 14 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Detailed Description N-Channel 1000V 6A (Tc) 180W (Tc) Through Hole TO-247 (IXFH)
Current - Continuous Drain (Id) @ 25°C 6A (Tc)

IXFH6N100F, IXFT6N100F

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Reference Price(In US Dollars)

In stock:145
  • 1 pcs$11.654
  • 30 pcs$9.555
  • 120 pcs$8.623
  • 510 pcs$7.225

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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