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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > IXYX200N65B3

IXYX200N65B3

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IXYX200N65B3

ManufacturerIXYS Corporation
DescriptionIGBT
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS Status
Voltage - Collector Emitter Breakdown (Max) 650V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 100A
Test Condition 400V, 100A, 0 Ohm, 15V
Td (on/off) @ 25°C 60ns/370ns
Switching Energy 5mJ (on), 4mJ (off)
Supplier Device Package PLUS247™-3
Series XPT™, GenX3™
Reverse Recovery Time (trr) 108ns
Power - Max 1560W
Package / Case TO-247-3
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Manufacturer Standard Lead Time 24 Weeks
Input Type Standard
IGBT Type -
Gate Charge 340nC
Detailed Description IGBT 650V 410A 1560W Through Hole PLUS247™-3
Current - Collector Pulsed (Icm) 1100A
Current - Collector (Ic) (Max) 410A

IXYK200N65B3, IXYX200N65B3

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Reference Price(In US Dollars)

In stock:1029
  • 30 pcs$15.519

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