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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > IXSQ20N60B2D1

IXSQ20N60B2D1

IXSQ20N60B2D1
IXYS Corporation

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IXSQ20N60B2D1

ManufacturerIXYS Corporation
DescriptionIGBT 600V 35A 190W TO3P
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 16A
Test Condition -
Td (on/off) @ 25°C 30ns/116ns
Switching Energy 380µJ (off)
Supplier Device Package TO-3P
Series -
Reverse Recovery Time (trr) 30ns
Power - Max 190W
Packaging Bulk
Package / Case TO-3P-3, SC-65-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type PT
Gate Charge 33nC
Detailed Description IGBT PT 600V 35A 190W Through Hole TO-3P
Current - Collector (Ic) (Max) 35A
Base Part Number IXS*20N60

IXSH20N60B2D1

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