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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > IXGJ40N60C2D1

IXGJ40N60C2D1

IXGJ40N60C2D1
IXYS Corporation

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IXGJ40N60C2D1

ManufacturerIXYS Corporation
DescriptionIGBT 600V 75A 300W TO268
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 30A
Test Condition 400V, 30A, 3 Ohm, 15V
Td (on/off) @ 25°C 18ns/90ns
Switching Energy 200µJ (off)
Supplier Device Package TO-268
Series HiPerFAST™
Reverse Recovery Time (trr) 25ns
Power - Max 300W
Packaging Tube
Package / Case TO-220-3, Short Tab
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type PT
Gate Charge 95nC
Detailed Description IGBT PT 600V 75A 300W Through Hole TO-268
Current - Collector Pulsed (Icm) 200A
Current - Collector (Ic) (Max) 75A
Base Part Number IXG*40N60

IXG(H,J,T)40N60C2D1

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