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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SIZ900DT-T1-GE3

SIZ900DT-T1-GE3

SIZ900DT-T1-GE3
Electro-Films (EFI) / Vishay

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SIZ900DT-T1-GE3

ManufacturerElectro-Films (EFI) / Vishay
DescriptionMOSFET 2N-CH 30V 24A POWERPAIR
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 2.4V @ 250µA
Supplier Device Package 6-PowerPair™
Series TrenchFET®
Rds On (Max) @ Id, Vgs 7.2 mOhm @ 19.4A, 10V
Power - Max 48W, 100W
Packaging Cut Tape (CT)
Package / Case 6-PowerPair™
Other Names SIZ900DT-T1-GE3CT
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Detailed Description Mosfet Array 2 N-Channel (Half Bridge) 30V 24A, 28A 48W, 100W Surface Mount 6-PowerPair™
Current - Continuous Drain (Id) @ 25°C 24A, 28A
Base Part Number SIZ900

SIZ900DT

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Reference Price(In US Dollars)

In stock:145
  • 1 pcs$2.332
  • 10 pcs$2.109
  • 100 pcs$1.694
  • 500 pcs$1.318
  • 1000 pcs$1.092

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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Introduce of SIZ900DT-T1-GE3

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