SIE854DF-T1-E3
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SIE854DF-T1-E3
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | MOSFET N-CH 100V 60A POLARPAK |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 4.4V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 10-PolarPAK® (L) |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 14.2 mOhm @ 13.2A, 10V |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (L) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 3100pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Detailed Description | N-Channel 100V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L) |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| RFQ | |
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