SI7960DP-T1-GE3
SI7960DP-T1-GE3
Manufacturer | Electro-Films (EFI) / Vishay |
---|---|
Description | MOSFET 2N-CH 60V 6.2A PPAK SO-8 |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Supplier Device Package | PowerPAK® SO-8 Dual |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 21 mOhm @ 9.7A, 10V |
Power - Max | 1.4W |
Packaging | Original-Reel® |
Package / Case | PowerPAK® SO-8 Dual |
Other Names | SI7960DP-T1-GE3DKR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | - |
Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Detailed Description | Mosfet Array 2 N-Channel (Dual) 60V 6.2A 1.4W Surface Mount PowerPAK® SO-8 Dual |
Current - Continuous Drain (Id) @ 25°C | 6.2A |
Base Part Number | SI7960 |
RFQ |
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Introduce of SI7960DP-T1-GE3
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