SI6467BDQ-T1-E3
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SI6467BDQ-T1-E3
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | MOSFET P-CH 12V 6.8A 8-TSSOP |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 850mV @ 450µA |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 8-TSSOP |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 12.5 mOhm @ 8A, 4.5V |
| Power Dissipation (Max) | 1.05W (Ta) |
| Packaging | Cut Tape (CT) |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Other Names | SI6467BDQ-T1-E3CT |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 4.5V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Detailed Description | P-Channel 12V 6.8A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| RFQ | |
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Introduce of SI6467BDQ-T1-E3
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