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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI5908DC-T1-GE3

SI5908DC-T1-GE3

SI5908DC-T1-GE3
Electro-Films (EFI) / Vishay

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SI5908DC-T1-GE3

ManufacturerElectro-Films (EFI) / Vishay
DescriptionMOSFET 2N-CH 20V 4.4A 1206-8
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package 1206-8 ChipFET™
Series TrenchFET®
Rds On (Max) @ Id, Vgs 40 mOhm @ 4.4A, 4.5V
Power - Max 1.1W
Packaging Tape & Reel (TR)
Package / Case 8-SMD, Flat Lead
Other Names SI5908DC-T1-GE3TR
SI5908DCT1GE3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 33 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds -
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Detailed Description Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25°C 4.4A
Base Part Number SI5908

SI5908DC

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In stock:5988
  • 3000 pcs$0.752

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