SI5519DU-T1-GE3
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SI5519DU-T1-GE3
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | MOSFET N/P-CH 20V 6A CHIPFET |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFet Dual |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 36 mOhm @ 6.1A, 4.5V |
| Power - Max | 10.4W |
| Packaging | Original-Reel® |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Other Names | SI5519DU-T1-GE3DKR |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17.5nC @ 10V |
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 20V |
| Detailed Description | Mosfet Array N and P-Channel 20V 6A 10.4W Surface Mount PowerPAK® ChipFet Dual |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Base Part Number | SI5519 |
| RFQ | |
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Introduce of SI5519DU-T1-GE3
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