SI5402DC-T1-GE3
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SI5402DC-T1-GE3
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | MOSFET N-CH 30V 4.9A 1206-8 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 1206-8 ChipFET™ |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 4.9A, 10V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Lead |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Detailed Description | N-Channel 30V 4.9A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™ |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Ta) |
| RFQ | |
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Introduce of SI5402DC-T1-GE3
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