SI2307BDS-T1-GE3
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SI2307BDS-T1-GE3
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | MOSFET P-CH 30V 2.5A SOT23-3 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 78 mOhm @ 3.2A, 10V |
| Power Dissipation (Max) | 750mW (Ta) |
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Other Names | SI2307BDS-T1-GE3-ND SI2307BDS-T1-GE3TR |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 33 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Detailed Description | P-Channel 30V 2.5A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236) |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| RFQ | |
Reference Price(In US Dollars)
- 5 pcs$0.096
- 50 pcs$0.079
- 150 pcs$0.07
- 500 pcs$0.064
- 3000 pcs$0.056
- 6000 pcs$0.054
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
Request Quote
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Introduce of SI2307BDS-T1-GE3
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