EPC2107ENGRT
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EPC2107ENGRT
| Manufacturer | EPC |
|---|---|
| Description | TRANS GAN 3N-CH 100V BUMPED DIE |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA |
| Supplier Device Package | 9-BGA (1.35x1.35) |
| Series | eGaN® |
| Rds On (Max) @ Id, Vgs | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V |
| Power - Max | - |
| Packaging | Tape & Reel (TR) |
| Package / Case | 9-VFBGA |
| Other Names | 917-EPC2107ENGRTR |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 16pF @ 50V, 7pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs | 0.16nC @ 5V, 0.044nC @ 5V |
| FET Type | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 100V |
| Detailed Description | Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35) |
| Current - Continuous Drain (Id) @ 25°C | 1.7A, 500mA |
| RFQ | |
Reference Price(In US Dollars)
- 5000 pcs$1.059
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of EPC2107ENGRT
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