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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > HBDM60V600W-7

HBDM60V600W-7

HBDM60V600W-7
Diodes Incorporated

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HBDM60V600W-7

ManufacturerDiodes Incorporated
DescriptionTRANS NPN/PNP 65V/60V SOT363
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 65V, 60V
Vce Saturation (Max) @ Ib, Ic 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Transistor Type NPN, PNP
Supplier Device Package SOT-363
Series -
Power - Max 200mW
Packaging Tape & Reel (TR)
Package / Case 6-TSSOP, SC-88, SOT-363
Other Names HBDM60V600W7
HBDM60V600WDITR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 24 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 100MHz
Detailed Description Bipolar (BJT) Transistor Array NPN, PNP 65V, 60V 500mA, 600mA 100MHz 200mW Surface Mount SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V / 100 @ 150mA, 10V
Current - Collector Cutoff (Max) 100nA
Current - Collector (Ic) (Max) 500mA, 600mA
Base Part Number HBDM60V600

HBDM60V600W

RFQ

Reference Price(In US Dollars)

In stock:145
  • 1 pcs$0.152
  • 10 pcs$0.122
  • 30 pcs$0.11
  • 100 pcs$0.094
  • 500 pcs$0.087
  • 1000 pcs$0.083

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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Introduce of HBDM60V600W-7

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