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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > SMUN5313DW1T3G

SMUN5313DW1T3G

SMUN5313DW1T3G
AMI Semiconductor / ON Semiconductor

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SMUN5313DW1T3G

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionTRANS NPN/PNP PREBIAS SOT363
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package SOT-363
Series -
Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 47 kOhms
Power - Max 187mW
Packaging Tape & Reel (TR)
Package / Case 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 40 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition -
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

MUN5313DW1, NSBC144EPDxx

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In stock:145
  • 10000 pcs$0.104

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