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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > SMUN5116DW1T1G

SMUN5116DW1T1G

SMUN5116DW1T1G
AMI Semiconductor / ON Semiconductor

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SMUN5116DW1T1G

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionTRANS 2PNP PREBIAS 0.187W SOT363
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package SC-88/SC70-6/SOT-363
Series -
Resistor - Emitter Base (R2) -
Resistor - Base (R1) 4.7 kOhms
Power - Max 187mW
Packaging Tape & Reel (TR)
Package / Case 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 40 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition -
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA
Base Part Number MUN51**DW1T

MUN5116DW1, NSBA143TDXV6

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Reference Price(In US Dollars)

In stock:9550
  • 1 pcs$0.081
  • 200 pcs$0.031
  • 500 pcs$0.03
  • 1000 pcs$0.03

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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