NTP8G206NG
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NTP8G206NG
| Manufacturer | AMI Semiconductor / ON Semiconductor |
|---|---|
| Description | MOSFET N-CH 600V 17A TO220 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |
| Vgs (Max) | ±18V |
| Technology | GaNFET (Gallium Nitride) |
| Supplier Device Package | TO-220-3 |
| Series | - |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 11A, 8V |
| Power Dissipation (Max) | 96W (Tc) |
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Other Names | NTP8G206NGOS |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 480V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3nC @ 4.5V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 8V |
| Drain to Source Voltage (Vdss) | 600V |
| Detailed Description | N-Channel 600V 17A (Tc) 96W (Tc) Through Hole TO-220-3 |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| RFQ | |
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