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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > NSVDTA114YM3T5G

NSVDTA114YM3T5G

NSVDTA114YM3T5G
AMI Semiconductor / ON Semiconductor

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NSVDTA114YM3T5G

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionTRANS PREBIAS PNP 260MW SOT723
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Transistor Type PNP - Pre-Biased
Supplier Device Package SOT-723
Series Automotive, AEC-Q101
Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 10 kOhms
Power - Max 260mW
Packaging Tape & Reel (TR)
Package / Case SOT-723
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 13 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 260mW Surface Mount SOT-723
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA

MUN(2,5)114, MMUN2114L, DTA114Yxx, NSBA114YF3

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Reference Price(In US Dollars)

In stock:261828
  • 8000 pcs$0.057

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