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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSTB1002DXV5T1G

NSTB1002DXV5T1G

NSTB1002DXV5T1G
AMI Semiconductor / ON Semiconductor

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NSTB1002DXV5T1G

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionTRANS NPN PREBIAS/PNP 0.5W SOT55
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V, 40V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA
Transistor Type 1 NPN Pre-Biased, 1 PNP
Supplier Device Package SOT-553
Series -
Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 47 kOhms
Power - Max 500mW
Packaging Tape & Reel (TR)
Package / Case SOT-553
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 14 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 40V 100mA, 200mA 250MHz 500mW Surface Mount SOT-553
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V / 100 @ 1mA, 10V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA, 200mA

NSTB1002DXV5T1G,5G

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In stock:60178
  • 4000 pcs$0.157

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